AO3420 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
N-Channel MOSFET
AO3420 (KO3420)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Drain-Source Breakdown Voltage
VDSS ID=250μA, VGS=0V
20
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
IGSS
VDS=20V, VGS=0V
VDS=20V, VGS=0V, TJ=55℃
VDS=0V, VGS=±12V
Gate Threshold Voltage
VGS(th) VDS=VGS , ID=250μA
0.4
VGS=10V, ID=6A
Static Drain-Source On-Resistance
RDS(On)
VGS=10V, ID=6A TJ=125℃
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
Forward Transconductance
Input Capacitance
Output Capacitance
VGS=1.8V, ID=2A
gFS
VDS=5V, ID=6A
Ciss
420
Coss
VGS=0V, VDS=10V, f=1MHz
65
Reverse Transfer Capacitance
Crss
45
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Rg
VGS=0V, VDS=0V, f=1MHz
0.8
Qg
VGS=10V, VDS=10V, ID=6A
Qgs
Gate Drain Charge
Qgd
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VGS=10V, VDS=10V, RL=1.7Ω,RG=3Ω
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
trr
IF= 6A, dI/dt= 100A/us
Qrr
IS
VSD
IS=1A,VGS=0V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
Typ Max Unit
V
1
uA
5
±100 nA
1.1 V
24
35
27 mΩ
42
55
25
S
630
125 pF
105
2.6 Ω
12.5
6
nC
1
2
3
7.5
20
ns
6
14
6
nC
2
A
1
V
■ Marking
Marking
AN**
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