AO3416 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
N-Channel Enhancement MOSFET
AO3416 (KO3416)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On-State Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charg
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
ID(on)
RDS(On)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
ID=250uA, VGS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, Ta=70℃
VDS=0V, VGS=±8V
VDS=VGS , ID=250μA
VDS =5 V, VGS = 4.5 V
VGS=4.5V, ID=6.5A
VGS=4.5V, ID=6.5A TJ=125℃
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
VDS=5V, ID=6.5A
VGS=0V,VDS=10V,f=1MHz
VGS=0V,VDS=0V,f=1MHz
VGS=4.5V, VDS=10V, ID=6.5A
VDS=10V, ,VGEN=4.5V
RL=1.54Ω,RG=3Ω
IF= 6.5A, dI/dt= 100A/μs
IS=1.0A,VGS=0V
Min Typ Max Unit
20
V
1
uA
5
±10 u A
0.4 0.7 1.1 V
30
A
16 22
22 30
mΩ
18 26
21 34
50
S
1295 1650
160
pF
87
1.8
KΩ
10
4.2
nC
2.6
280
328
3.76
ns
2.24
31 41
6.8
nC
2
A
0.62 1
V
*1 Pulse test: PW ≤ 300us duty cycle≤ 2%.
■ Marking
Marking
A08K
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