AO3415A-HF-3 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
AO3415A-HF (KO3415A-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
Test Conditions
Min Typ Max Unit
VDSS ID=-250μA, VGS=0V
-20
V
VDS=-20V, VGS=0V
IDSS
VDS=-20V, VGS=0V, TJ=55℃
-1
uA
-5
IGSS
VDS=0V, VGS=±8V
±10 uA
VGS(th) VDS=VGS ID=-250μA
-0.3
-0.9 V
VGS=-4.5V, ID=-4A
43
VGS=-4.5V, ID=-4A TJ=125℃
59
RDS(On) VGS=-2.5V, ID=-4A
55 mΩ
VGS=-1.8V, ID=-2A
75
VGS=-1.5V, ID=-1A
100
ID(ON) VGS=-4.5V, VDS=-5V
-30
A
gFS
VDS=-5V, ID=-4 A
20
S
Ciss
600
905
Coss
VGS=0V, VDS=-10V, f=1MHz
80
150 pF
Crss
48
115
Rg
VGS=0V, VDS=0V, f=1MHz
6
20 Ω
Qg
7.4
11
Qgs
VGS=-4.5V, VDS=-10V, ID=-4A
0.8
1.2 nC
Qgd
1.3
3.1
td(on)
13
tr
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
9
td(off)
RGEN=3Ω
19
ns
tf
29
trr
IF=-4A, dI/dt=100A/μs
Qrr
20
32
40
62 nC
IS
-2
A
VSD
IS=-1A,VGS=0V
-1
V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Marking
XF** F
2 _{www.kexin.com.cn}