AO3414-HF-3 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFIECT
N-Channel MOSFET
AO3414-HF (KO3414-HF)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off FallTime
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
Testconditions
Min Typ Max Unit
VDSS ID =250uA , V GS=0V
20
V
VDS=16V, VGS=0V
IDSS
VDS=16V, VGS=0V ,TJ=55
1
A
5
IGSS VDS=0V, VGS= 8V
100 nA
VGS(th) VDS=VGS ID=250uA
0.4
1
V
VGS=4.5V, ID=4.2A
50
VGS=4.5V, ID=4.2A
RDS(ON)
VGS=2.5V, ID=3.7A
TJ=125
70
m
63
VGS=1.8V, ID=3.2A
87
ID(ON) VGS=4.5V, VDS=5V
15
A
gFS VDS=5V, ID=4.2A
11
S
Ciss
436
pF
Coss VGS=0V, VDS=-10V, f=1MHz
66
pF
Crss
44
pF
Rg
VGS=0V, VDS=0V, f=1MHz
3
Qg
6.2
nC
Qgs VGS=4.5V, VDS= =10V, ID=4.2A
1.6
nC
Qgd
0.5
nC
tD(on)
5.5
ns
tr
6.3
ns
VGS=4.5V, VDS=10V, RL=2.7Ω,RGEN=6Ω
tD(off)
40
ns
tf
12.7
ns
trr
IF=4A, dI/dt=100A/ s
12.3
ns
Qrr
IF=4A, dI/dt=100A/ s
3.5
nC
IS
2
A
VSD IS=1A,VGS=0V
0.76 1
V
Marking
Marking
AE* F
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