AO3404 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFEITC
N-Channel Enhancement MOSFET
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
Gate resistance
Input Capacitance
Output Capacitance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Turn-On DelayTime
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
AO3404 (KO3404)
Symbol
VDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Testconditions
ID=250 A, VGS=0V
VDS=24V, VGS=0V
VDS=24V, VGS=0V ,TJ=55
VDS=0V, VGS= 20V
VDS=VGS ID=250 A
VGS=4.5V, VDS=5V
VGS=10V, ID=5.8A
VGS=10V, ID=5.8A
TJ=125
VGS=4.5V, ID=5.0A
VDS=5V, ID=5.8A
IS=1A
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=5.8A
VGS=10V, VDS=15V, RL=2.7 ,RGEN=3
IF=5.8A, dI/dt=100A/ s
IF=5.8A, dI/dt=100A/ s
Min Typ Max Unit
30
V
1
A
5
100 nA
1 1.9 3
V
20
A
22.5 28
m
31.3 38
34.5 43 m
10 14.5
S
0.76 1
V
2.5 A
680 820 pF
102
pF
77
pF
3 3.6
13.88 17 nC
6.78 8.1 nC
1.8
nC
3.12
nC
4.6 6.5 ns
3.8 5.7 ns
20.9 30 ns
5 7.5 ns
16.1 21 ns
7.4 10 nC
Marking
Marking
A4*
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