AO3401HF Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
MOSFET
P-Channel Enhancement MOSFET
AO3401 HF (KO3401 HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
Min Typ Max Unit
ID=-250μA, VGS=0V
-30
V
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V, TJ=55℃
-1
μA
-5
VDS=0V, VGS=±12V
±100 nA
VDS=VGS ID=-250μA
-0.4 -1 -1.3 V
VGS=-10V, ID=-4.2A
42 50
VGS=-10V, ID=-4.2A TJ=125℃
VGS=-4.5V, ID=-4A
75
mΩ
53 65
VGS=-2.5V, ID=-1A
80 120
VGS=-4.5V, VDS=-5V
-25
A
VDS=-5V, ID=-5A
7 11
S
954
VGS=0V, VDS=-15V, f=1MHz
115
pF
77
VGS=0V, VDS=0V, f=1MHz
6
Ω
9.4
VGS=-4.5V, VDS=-15V, ID=-4A
2
nC
3
6.3
3.2
VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=6Ω
38.3
ns
12
IF=-4A, dI/dt=100A/μs
20.2
IF=5A, dI/dt=100A/μs
11.2
nC
-2.2 A
IS=-1A,VGS=0V
-0.75 -1
V
■ Marking
Marking
A18E F
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