AO3400A Datasheet, PDF (2/4 Pages) Alpha Industries – N-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
N-Channel MOSFET
AO3400A (KO3400A)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=30V, VGS=0V
VDS=30V, VGS=0V, TJ=55℃
VDS=0V, VGS=±12V
VDS=VGS , ID=250μA
VGS=10V, ID=5.7A
VGS=10V, ID=5.7A TJ=125℃
VGS=4.5V, ID=5A
VGS=2.5V, ID=3A
VGS=4.5V, VDS=5V
VDS=5V, ID=5.7A
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=5.7A
VGS=10V, VDS=15V, RL=2.6Ω,RG=3Ω
IF= 5.7A, dI/dt= 100A/us
IS=1A,VGS=0V
Min Typ Max Unit
30
V
1
uA
5
±100 nA
0.65
1.45 V
26.5
38
mΩ
32
38
30
A
33
S
630
75
pF
50
1.5
4.5 Ω
6
7
1.3
nC
1.8
3
2.5
25
ns
4
8.5
2.6
nC
2
A
1
V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Marking
X0**
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