AO3400 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

SMD Type
AO3400 (KO3400)
MOSFIECT
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(ON)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Testconditions
ID=250 A, VGS=0V
VDS=24V, VGS=0V
VDS=24V, VGS=0V ,TJ=55
VDS=0V, VGS= 12V
VDS=VGS ID=250 A
VGS=10V, ID=5.8A
VGS=10V, ID=5.8A
TJ=125
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=4.5V, VDS=5V
VDS=5V, ID=5A
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=5.8A
VGS=10V, VDS=15V, RL=2.7 ,RGEN=3
IF=5A, dI/dt=100A/ s
IF=5A, dI/dt=100A/ s
IS
VSD IS=1A,VGS=0V
Min Typ Max Unit
30
V
1
A
5
100 nA
0.7 1.1 1.4 V
22.8 28
m
32 39
27.3 33 m
43.3 52 m
30
A
10 15
S
823 1050 pF
99
pF
77
pF
1.4 3.6
9.7 12 nC
1.6
nC
3.1
nC
3.3 5
ns
4.8 7
ns
26.3 40 ns
4.1 6
ns
16 20 ns
8.9 12 nC
2.5 A
0.71 1
V
Marking
Marking
A0*
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