2SK1284-Z Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK1284-Z
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Diode Forward Voltage
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS VDS=100V, VGS=0V
IGSS VDS=0V, VGS=±10V
VGS(off) VDS=10 V ID=1mA
RDS(On)
VGS=10V, ID=2 A
VGS=4V, ID=2 A
gFS
VDS=10V, ID=2 A
Ciss
Coss VGS=0V, VDS=10V, f=1MHz
Crss
Qg
Qgs
VGS=10V, VDS=80V, ID=3A
Qgd
td(on)
tr
td(off)
VGS=10V, VDS=50V, ID=2A,
RL=25Ω,RG=10Ω
tf
trr
IF= 3A, VGS=0, dI/dt= 50A/μs
Qrr
VSD
IS=3A,VGS=0V
MOSFET
Min Typ Max Unit
100
V
10 uA
±10 uA
1
2.5 V
320
mΩ
400
2.4
S
500
160
pF
20
13
3
nC
2
40
55
500
ns
120
140
250
nC
0.9
V
2 _{www.kexin.com.cn}