2SC5356 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Switching time Rise time
Switching time Storage time
Switching time Fall time
2SC5356
Symbol
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
Testconditons
VCB = 720 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.15 A
IC = 1.2 A, IB = 0.24 A
IC = 2 A, IB = 0.24 A
tr
tstg
tf
Transistors
Min Typ Max Unit
100 ìA
10 ìA
900
V
800
V
10
15
1.0 V
1.3 V
0.7
4.0 ìs
0.5
Marking
Marking
C5356
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