2SC4306 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – High-Current Switching Applications

SMD Type
2SC4306
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Turn-on time
Storage time
Fall time
Symbol
Testconditons
ICBO VCB = 20V, IE=0
IEBO VEB = 4V, IC=0
VCE = 2V , IC = 500mA
hFE
VCE = 2V , IC = 6A
fT VCE = 2V , IC = 500mA
Cob VCB = 10V , f = 1.0MHz
VCE(sat) IC = 5A , IB = 250mA
VBE(sat) IC = 5A , IB = 250mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ton
tstg
tf
hFE Classification
Rank
hFE
R
100 200
S
140 280
T
200 400
Transistors
Min Typ Max Unit
1 ìA
1 ìA
100
400
70
250
MHz
60
pF
220 400 mV
1 1.3 V
30
V
20
V
5
V
30 300 ns
250 1000 ns
15 150 ns
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