2SB934_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
■ Typical Characterisitics
50
40
(1)
P_C — Ta
(1) T_C=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P_C=1.3W)
30
20
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2SB934
–2.0
–1.6
–1.2
– 0.8
– 0.4
I_C — V_CE
T_C=25˚C
I_B=–120m–A110mA
–100mA
–90mA
–80mA
–70mA
–60mA
–40mA
–30mA
–20mA
–10mA
0
0
–2
–4
–6
–8 –10
Collector to emitter voltage V_CE (V)
–100
–30
–10
V_CE(sat) — I_C
I_C/I_B=20
–3
–1
– 0.3
– 0.1
– 0.03
T_C=100˚C
–25˚C
25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current I_C (A)
–100
–30
–10
V_BE(sat) — I_C
I_C/I_B=20
–3
–1
– 0.3
– 0.1
T_C=–25˚C
100˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current I_C (A)
10000
3000
h_FE — I_C
V_CE=–2V
1000
300 T_C=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current I_C (A)
10000
3000
1000
f_T — I_C
V_CE=–10V
f=10MHz
T_C=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current I_C (A)
10000
3000
1000
C_ob — I_C
I_E=0
f=1MHz
T_C=25˚C
300
100
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage V_CB (V)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=10
(–I_B1=I_B2)
10
V_CC=–50V
T_C=25˚C
3
1
t_stg
0.3
t_on
0.1
t_f
0.03
0.01
0
–2
–4
–6
–8
Collector current I_C (A)
Area of safe operation (ASO)
–100
–30
I_CP
–10
I_C
–3
10ms
Non repetitive pulse
T_C=25˚C
t=0.5ms
1ms
–1
– 0.3
300ms
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage V_CE (V)
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