1N4001A Datasheet, PDF (2/2 Pages) Dc Components – TECHNICAL SPECIFICATIONS SILICON RECTIFIER VOLTAGE RANGE - 50 to 100 Volts CURRENT - 1.0 Ampere

SMD Type
Diodes
Rectifier Diodes
1N4001A ~ 1N4007A
■ Typical Characterisitics
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
LEAD TEMPERATURE. (^oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
10
1
0.1
0.01
Tj=125⁰C
Tj=75⁰C
Tj=25⁰C
50
20
10
1N4001A-1N4006A
1N4007A
0.001
0
20 40
60 80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
5
8.3ms Single
2 Half Sine Wave
Tj=Tj max
1
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
50
20
10
5
50
Tj=25⁰C
2
f=1.0MHz
1
Vsig=50mVp-p
20
0.5
10
0.2
0.1
5
0.05
2
0.02
1
0.01
0.1
1
10
100
REVERSE VOLTAGE. (V)
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm _{SET TIME BASE FOR}
5/ 10ns/ cm
2 _{www.kexin.com.cn}