ZXMN10A08G Datasheet, PDF (1/5 Pages) Zetex Semiconductors – 100V SOT223 N-channel enhancement mode MOSFET

SMD Type
N-Channel MOSFET
ZXMN10A08G (KXMN10A08G)
MOSFET
■ Features
● VDS (V) = 100V
● ID = 2.9 A (VGS = 10V)
● RDS(ON) ＜ 250mΩ (VGS = 10V)
D
● RDS(ON) ＜ 300mΩ (VGS = 6V)
G
S
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Gate
2.Drain
3.Source
4.Drain
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current @ VGS= 10V
Pulsed Drain Current
Power Dissipation
Linear derating factor
Linear derating factor
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
TA=25℃ (Note.1)
TA=70℃ (Note.1)
TA=25℃ (Note.2)
TA=25℃ (Note.2)
TA=25℃ (Note.1)
(Note.2)
(Note.1)
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
100
±20
2.9
2.3
2
11
2
3.9
16
31
62.5
32
150
-55 to 150
Unit
V
A
W
mW/℃
W
mW/℃
℃/W
℃
Note.1: For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
Note.2: For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz
in still air conditions.
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