XP151A13 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Power

SMD Type
N-Channel Power MOSFET
XP151A13
MOSFET
■ Features
● Low on-state resistance :
RDS(on) = 0.1ΩMax ( VGS = 4.5V )
RDS(on) = 0.14ΩMax ( VGS = 2.5V )
RDS(on) = 0.25Ω Max ( VGS = 1.5V )
● Ultra high-speed switching
● Gate Protect Diode Built-in
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current
-Pulse
Maximum Power Dissipation *
Thermal Resistance,Junction-to-Ambient
Operating Junction and Storage Temperature Range
* When implemented on a ceramic PCB
Symbol
VDS
VGS
ID
IDP
PD
RθJA
TJ,TSTG
Rating
20
±8
1
4
0.5
250
- 55 to 150
Unit
V
V
A
A
W
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Source cutoff Voltage
Symbol
IDSS
IGSS
Vgs(off)
Drain-Source On-State Resistance
RDS(on)
Forward Transfer Adittance
Body Drain Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
|Yfs|
VF
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Testconditons
VGS = 20V , VDS = 0V
VDS = ±8V , VGS = 0V
ID=1mA,VDS=10V
VGS = 4.5V , ID =0.5A
VGS = 2.5V , ID = 0.5A
VGS = 1.5V , ID = 0.1A
ID=0.5A,VDS=10V
IF=1A,,VGS=0V
VDS = 10V , VGS = 0V,f = 1.0MHz
VGS= 5V , ID = 0.5A ^, VDD=10V
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22.ESmoituterrce
33..cDollreactionr
Min Typ Max Unit
10 μA
±10 μA
0.5
1.2 V
0.075 0.1
0.1 0.14 Ω
0.17 0.25
4.2
S
0.8 1.1 V
220
120
pF
45
10
ns
15
ns
75
ns
65
ns
1
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