XBS104V Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Barrier Diodes

SMD Type
Diodes
Schottky Barrier Diodes
XBS104V
■ Features
● Forward Voltage : VF=0.365V (TYP.)
● Forward Current : IF(AV)=1A
● Repetitive Peak Reverse Voltage : VRM=40V
1
SOD-123
2.7 +0.1
-0.1
3.7 +0.1
-0.1
0.50
0.35
Unit: mm
1.1 ^+0.05
-0.05
0.1max
PIN 1. CATHODE
2
2. ANODE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
DC Forward Current
Peak forward surge current (Note.1)
Junction Temperature
Storage temperature range
Symbol
VRM
VR
IF(AV)
IFSM
TJ
Tstg
Rating
40
40
1
20
125
-55 to 150
Note.1:Non continuous high amplitude 60Hz half-sine wave.
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Reverse breakdown voltage
VRM IR= 100 uA
IF= 100m A
Forward voltage
VF IF= 500mA
IF= 1 A
Reverse voltage leakage current
IR
VR= 40 V
Junction capacitance
Cj VR= 1V, f= 1 MHz
Reverse Recovery Time (Note.2)
trr IF=IR=10mA , irr=1mA
Note.2: trr measurement circuit.
Bias
Device Under test
Pulse Generatrix
Oscilloscope
Unit
V
A
℃
Min Typ Max Unit
40
V
230 315
300 385 mV
365 410
0.25 2 mA
150
pF
41
ns
■ Marking
Marking
SL
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