US1AF Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT ULTRA FAST RECTIFIER

SMD Type
Ultra Fast Recovery Diodes
US1AF ~ US1MF
Diodes
■ Features
● Glass Passivated Chip
● Low Forward Voltage Drop And High Current Capability
● Low Reverse Leakage Current
● Epoxy meets UL 94 V-0 flammability rating
● Ultra Fast Switching For High Efficiency
SOD-123F
Unit:mm
Cathode Band
Top View
2.8 ± 0.1
0.65 ± 0.1
3.7 ± 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Averaged Forward Current.TL=110℃
Peak Forward Surge Current @ 8.3ms
Thermal Resistance Junction to Ambient
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
US
1AF
US US US US
1BF 1CF 1DF 1GF
US
1JF
US US
1KF 1MF
Unit
VRRM 50 100 150 200 400 600 800 1000
VRMS 35 70 105 140 280 420 560 700 V
VDC
50 100 150 200 400 600 800 1000
IFAV
1
A
IFSM
30
RθJA
30
℃/W
Tj
150
TOP
-65 to 175
℃
Tstg
-65 to 175
■ Electrical Characteristics Ta = 25℃
Parameter
Forward voltage
US1AF-1DF
US1GF
US1JF-1MF
Reverse voltage leakage current
Reverse Recovery Time
Typical Junction Capacitance
US1AF-US1GF
US1JF~US1KF
US1MF
US1AF-1GF
US1JF-1MF
Symbol
Test Conditions
VF IFM=1A, TJ = 25°C
Ta = 25℃
IR
Ta = 100℃
Trr IF=0.5A, IR=1A, Irr=0.25A
CJ VR=4V, f=1MHz
Min Typ Max Unit
1
1.4 V
1.7
10
uA
100
50
75 ns
100
20
pF
17
■ Marking
NO.
Marking
US1AF
US1A
US1BF
US1B
US1CF
US1C
US1DF
US1D
US1GF
US1G
US1JF
US1J
US1KF
US1K
US1MF
US1M
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