SS110FH Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Diodes

SMD Type
Schottky Diodes
SS110FH
Diodes
■ Features
● High Breakdown Voltage
● Low Turn-on Voltage
● Guard Ring Construction for Transient Protection
■ Absolute Maximum Ratings Ta = 25℃
1
2
PIN DESCRIPTION
1 Cathode
2 Anode
Weight：17.6mg，0.00062 o z
Simplified outline SOD-123FH
Parameter
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
Average Rectified Forward Current
IO
Forward Continuous Current
IF
Repetitive Peak Forward Current @tp=1s,Duty Cycle < 50%
IFRM
Forward Surge Forward Current @ tp=10ms
IFSM
Power Dissipation
PD
Thermal Resistance Junction to Ambient (Note.1)
RθJA
Junction Temperature
TJ
Storage temperature range
Tstg
Note.1 Part mounted on FR-4 board with recommended pad layout
Rating
100
75
150
350
750
200
500
125
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Reverse breakdown voltage
V(BR)R IR= 100 uA
Forward voltage
VF1 IF= 0.1 mA
VF2 IF= 10mA
VF3 IF= 250 mA
IR1 VR=1.5 V
IR2 VR=1.5 V , TJ=60℃
IR3 VR=10 V
Reverse voltage leakage current (Note.1)
IR4 VR=10 V , TJ=60℃
IR5 VR=50 V
IR6 VR=50 V , TJ=60℃
IR7 VR=75 V
IR8 VR=75 V , TJ=60℃
Capacitance between terminals
VR= 0 V, f= 1 MHz
CT
VR= 1 V, f= 1 MHz
Note.1 Short duration test pulse used to minimize self-heating effect.
■ Marking
Marking
XH
Min Typ Max Unit
100
0.25
V
0.45
1
0.5
5
0.8
7.5
uA
2
15
5
20
10
pF
6
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