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SI3475DV Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 200-V (D-S) MOSFET | |||
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SMD Type
P-Channel MOSFET
SI3475DV (KI3475DV)
MOSFET
â Features
â VDS (V) =-200V
â ID =-0.95 A (VGS =-10V)
â RDS(ON) ï¼ 1.61Ω (VGS =-10V)
â RDS(ON) ï¼ 1.65Ω (VGS =-6V)
S
G
( SOT-23-6 )
0.4+0.1
-0.1
6
5
4
1
2
3
+0.01
-0.01
+0.2
-0.1
Unit: mm
0.15 +0.02
-0.02
1 Drain 4 Source
2 Drain 5 Drain
D
3 Gate 6 Drain
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Tc = 25â
Continuous Drain Current (TJ = 150 °C)
(Note.1,2)
Tc = 70â
Ta = 25â
Pulsed Drain Current
(Note.1,2) Ta = 70â
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
Tc = 25â
Power Dissipation
(Note.1,2)
Tc = 70â
Ta = 25â
(Note.1,2) Ta = 70â
Thermal Resistance.Junction- to-Ambient
t ⤠5 sec
Thermal Resistance.Junction- to-Foot
Steady State
Junction Temperature
Junction Storage Temperature Range
Note.1: Surface Mounted on 1" x 1" FR4 board.
Note.2: t = 5 sec.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
RthJA
RthJF
TJ
Tstg
Rating
-200
±20
-0.95
-0.77
-0.75
-0.59
-3
3
0.45
3.2
2.1
2
1.25
62.5
39
150
-55 to 150
Unit
V
A
mJ
W
â/W
â
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