SI3475DV-HF Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
SI3475DV-HF (KI3475DV-HF)
MOSFET
■ Features
● VDS (V) =-200V
● ID =-0.95 A (VGS =-10V)
● RDS(ON) ＜ 1.61Ω (VGS =-10V)
● RDS(ON) ＜ 1.65Ω (VGS =-6V)
● Pb−Free Package May be Available. The G−Suffix Denotes a
S
Pb−Free Lead Finish
G
( _SOT-23-6 )
0.4^+0.1
-0.1
6
5
4
Unit: mm
1
2
3
+0.01
-0.01
+0.2
-0.1
0.15 +0.02
-0.02
1 Drain 4 Source
2 Drain 5 Drain
3 Gate 6 Drain
D
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Tc = 25℃
Continuous Drain Current (TJ = 150 °C)
(Note.1,2)
Tc = 70℃
Ta = 25℃
Pulsed Drain Current
(Note.1,2) Ta = 70℃
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
Tc = 25℃
Power Dissipation
(Note.1,2)
Tc = 70℃
Ta = 25℃
(Note.1,2) Ta = 70℃
Thermal Resistance.Junction- to-Ambient
t ≤ 5 sec
Thermal Resistance.Junction- to-Foot
Steady State
Junction Temperature
Junction Storage Temperature Range
Note.1: Surface Mounted on 1" x 1" FR4 board.
Note.2: t = 5 sec.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
RthJA
RthJF
TJ
Tstg
Rating
-200
±20
-0.95
-0.77
-0.75
-0.59
-3
3
0.45
3.2
2.1
2
1.25
62.5
39
150
-55 to 150
Unit
V
A
mJ
W
℃/W
℃
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