SI2341DS Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2341DS (KI2341DS)
■ Features
● VDS (V) =-30V
● ID =-2.8A (VGS =-10V)
● RDS(ON) ＜ 72mΩ (VGS =-10V)
● RDS(ON) ＜ 120mΩ (VGS =-4.5V)
G1
S2
3D
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1
Pulsed Drain Current
Power Dissipation *1
Thermal Resistance.Junction- to-Ambient *1
Thermal Resistance.Junction- to-Ambient *2
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 70℃
Ta = 25℃
Ta = 70℃
*1 Surface Mounted on FR4 Board, t ≤ 5 sec.
*2 Surface Mounted on FR4 Board.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJF
TJ
Tstg
5 sec
Steady State
-30
±20
-2.8
-2.5
-2.2
-2.0
-12
0.9
0.71
0.57
0.45
140
175
75
150
-55 to 150
Unit
V
A
W
℃/W
℃
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