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SI2337DS Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 80-V (D-S) MOSFET | |||
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SMD Type
P-Channel Enhancement MOSFET
SI2337DS (KI2337DS)
MOSFET
â Features
â VDS (V) =-80V
â ID =-2.2A (VGS =-10V)
â RDS(ON) ï¼ 270mΩ (VGS =-10V)
S
â RDS(ON) ï¼ 303mΩ (VGS =-6V)
G1
S2
G
3D
D
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
â Absolute Maximum Ratings Ta = 25â
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Single-Pulse Avalanche Energy
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Ta = 25â
Ta = 70â
L=0.1mH
Ta = 25â
Ta = 70â
tâ¤10 sec
steady State
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
RthJA
RthJF
TJ
Tstg
5 sec
Steady State
-80
±20
-2.2
-1.2
-1.75
-0.96
-7
11
6
2.5
0.76
1.6
0.48
166
50
150
-55 to 150
260
Unit
V
A
mJ
W
â/W
â
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