|
SI2335DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET | |||
|
SMD Type
P-Channel Enhancement MOSFET
SI2335DS (KI2335DS)
â Features
â VDS (V) =-12V
â ID =-4.0A (VGS =-4.5V)
â RDS(ON) ï¼ 51mΩ (VGS =-4.5V)
â RDS(ON) ï¼ 70mΩ (VGS =-2.5V)
â RDS(ON) ï¼ 106mΩ (VGS =-1.8V)
G1
S2
3D
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25â
Ta = 70â
Pulsed Drain Current
Power Dissipation
Ta = 25â
Ta = 70â
Thermal Resistance.Junction- to-Ambient tâ¤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJF
TJ
Tstg
5 sec
Steady State
-12
±8
-4.0
-3.2
-3.3
-2.6
-15
1.25
0.75
0.8
0.48
100
166
50
150
-55 to 150
Unit
V
A
W
â/W
â
www.kexin.com.cn 1
|
▷ |