SI2335DS-3 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2335DS (KI2335DS)
MOSFET
■ Features
● VDS (V) =-12V
● ID =-4.0A (VGS =-4.5V)
● RDS(ON) ＜ 51mΩ (VGS =-4.5V)
● RDS(ON) ＜ 70mΩ (VGS =-2.5V)
● RDS(ON) ＜ 106mΩ (VGS =-1.8V)
G1
S2
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150℃) *1
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1” x 1” FR4 Board.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJF
TJ
Tstg
5 sec
Steady State
-12
±8
-4.0
-3.2
-3.3
-2.6
-15
1.25
0.75
0.8
0.48
100
166
50
150
-55 to 150
Unit
V
A
W
℃/W
℃
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