SI2333CDS-3 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2333CDS (KI2333CDS)
MOSFET
■ Features
● VDS (V) =-12V
● ID =-5.1A (VGS =-4.5V)
● RDS(ON) ＜ 35mΩ (VGS =-4.5V)
● RDS(ON) ＜ 45mΩ (VGS =-2.5V)
● RDS(ON) ＜ 59mΩ (VGS =-1.8V)
G1
S2
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150℃) *1
Pulsed Drain Current
Ta = 25℃
Ta = 70℃
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 70℃
*1 Surface Mounted on 1” x 1” FR4 Board.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJF
TJ
Tstg
5 sec
Steady State
-12
±8
-7.1
-5.1
-5.7
-4.0
-20
2.5
1.25
1.6
0.8
100
50
150
-55 to 150
Unit
V
A
W
℃/W
℃
www.kexin.com.cn ¹