SI2328DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

SMD Type
N-Channel Enhancement MOSFET
SI2328DS (KI2328DS)
■ Features
● VDS (V) = 100V
● ID = 1.5 A (VGS = 10V)
● RDS(ON) ＜ 250mΩ (VGS = 4.5V)
G1
S2
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1
Ta=25℃
Ta=70℃
Pulsed Drain Current *2
Avalanche Current
*2
Single Avalanche Energy
L=0.1mH
Power Dissipation *1
Ta=25℃
Ta=70℃
Thermal Resistance.Junction- to-Ambient *1 t≤5 sec
Steady State
Thermal Resistance.Junction-to-Foot
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
RthJA
tate
RthJF
TJ
Tstg
*1 Surface Mounted on 1” x 1” FR4 Board.
*2 Pulse width limited by maximum junction temperature
5 sec
Steady State
100
±20
1.5
1.15
1.2
0.92
6
6
1.8
1.25
0.73
0.8
0.47
100
170
55
150
-55 to 150
Unit
V
A
mJ
W
℃/W
℃
www.kexin.com.cn ¹