SI2324DS Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SSMMDD TTyyppee
MOSFET IC
N-Channel Enhancement MOSFET
SI2324DS (KI2324DS)
■ Features
● VDSS = 100V
● ID = 2.3 A (VGS = 10V)
● RDS(ON) ＜ 234mΩ (VGS = 10V)
● RDS(ON) ＜ 267mΩ (VGS = 6V)
● RDS(ON) ＜ 278mΩ (VGS = 4.5V)
D
G
S
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current TJ =150℃ *1
Pulsed Drain Current
TA=25℃
TA=70℃
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1” x 1” FR4 Board.
TA=25℃
TA=70℃
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ
Tstg
Rating
100
±20
2.3
1.8
5
2.5
1.6
100
50
150
-55 to 150
Unit
V
A
W
℃/W
℃
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