SI2319DS-3 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2319DS (KI2319DS)
MOSFET
■ Features
● VDS (V) =-40V
● ID =-3.0A (VGS =-10V)
● RDS(ON) ＜ 82mΩ (VGS =-10V)
● RDS(ON) ＜ 130mΩ (VGS =-4.5V)
G1
S2
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150℃) *1
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation *1
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient *1
Thermal Resistance.Junction- to-Ambient *2
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on FR4 Board, t ≤ 5 sec.
*2 Surface Mounted on FR4 Board.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJF
TJ
Tstg
5 sec
Steady State
-40
±20
-3.0
-2.3
-2.4
-1.85
-12
1.25
0.75
0.8
0.48
100
166
50
150
-55 to 150
Unit
V
A
W
℃/W
℃
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