SI2315BDS Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2315BDS (KI2315BDS)
■ Features
● VDS (V) =-12V
● ID =-3.85A (VGS =-4.5V)
● RDS(ON) ＜ 50mΩ (VGS =-4.5V)
● RDS(ON) ＜ 65mΩ (VGS =-2.5V)
● RDS(ON) ＜ 100mΩ (VGS =-1.8V)
G1
S2
3D
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1 Ta = 25℃
Ta = 70℃
Pulsed Drain Current *1
Power Dissipation *1
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
*1Surface Mounted on FR4 board.
Symbol
VDS
VGS
ID
IDM
PD
RthJA *1
RthJF
TJ
Tstg
5 sec
Steady State
-12
±8
-3.85
-3.0
-3.0
-2.45
-12
1.19
0.75
0.76
0.48
105
166
75
150
-55 to 150
Unit
V
A
W
℃/W
℃
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