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SI2314EDS-3 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET | |||
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SMD Type
N-Channel Enhancement MOSFET
SI2314EDS (KI2314EDS)
MOSFET
â Features
â VDS (V) = 20V
â ID = 4.9 A (VGS = 4.5V)
â RDS(ON) ï¼ 33mΩ (VGS = 4.5V)
â RDS(ON) ï¼ 40mΩ (VGS = 2.5V)
â RDS(ON) ï¼ 51mΩ (VGS = 1.8V)
G1
S2
3k
G
3D
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
D
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
â Absolute Maximum Ratings Ta = 25â
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ta=25â
Continuous Drain Current TJ =150â *1
Ta=70â
Pulsed Drain Current *2
Avalanche Current
*2
Single Avalanche Energy
L=0.1mH
Power Dissipation *1
Ta=25â
Ta=70â
Thermal Resistance.Junction- to-Ambient *1 tâ¤5 sec
Steady State
Thermal Resistance.Junction-to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1â x 1â FR4 Board.
*2 Pulse width limited by maximum junction temperature
S
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
RthJA
RthJF
TJ
Tstg
5 sec
Steady State
20
±12
4.9
3.77
3.9
3.0
15
15
11.25
1.25
0.75
0.8
0.48
100
166
50
150
-55 to 150
Unit
V
A
mJ
W
â/W
â
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