SI2312DS-3 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement MOSFET
SI2312DS (KI2312DS)
MOSFET
■ Features
● VDS (V) = 20V
● ID = 4.9 A (VGS =4.5V)
● RDS(ON) ＜ 33mΩ (VGS = 4.5V)
● RDS(ON) ＜ 40mΩ (VGS = 2.5V)
● RDS(ON) ＜ 51mΩ (VGS = 1.8V)
G1
S2
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TJ =150℃*1
Pulsed Drain Current *2
Ta=25℃
Ta=70℃
Avalanche Current
*2
Single Avalanche Energy
L=0.1mH
Power Dissipation *1
Ta=25℃
Ta=70℃
Thermal Resistance.Junction- to-Ambient *1 t≤5 sec
Steady State
Thermal Resistance.Junction-to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1” x 1” FR4 Board.
*2 Pulse width limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
RthJA
RthJF
TJ
Tstg
5 sec
Steady State
20
±8
4.9
3.77
3.9
3.0
15
15
11.25
1.25
0.75
0.8
0.48
100
166
50
150
-55 to 150
Unit
V
A
mJ
W
℃/W
℃
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