SI2309DS Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2309DS (KI2309DS)
■ Features
● VDS (V) =-60V
● ID =-1.25 A (VGS =-10V)
● RDS(ON) ＜ 340mΩ (VGS =-10V)
● RDS(ON) ＜ 550mΩ (VGS =-4.5V)
G1
S2
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1,*2
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Avalanche Current
L=0.1mH
Power Dissipation *1,*2
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t ≤5 sec
Steady State *1
Thermal Resistance.Junction- to-Case *1
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on FR4 Board.
*2 t ≤ 5 sec.
Symbol
VDS
VGS
ID
IDM
IAS
PD
RthJA
RthJC
TJ
Tstg
Rating
-60
±20
-1.25
-0.85
-8
-5
1.25
0.8
100
166
60
150
-55 to 150
Unit
V
A
W
℃/W
℃
www.kexin.com.cn ¹