SI2307DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2307DS (KI2307DS)
■ Features
● VDS (V) =-30V
● ID =-3.0A (VGS =-10V)
● RDS(ON) ＜ 80mΩ (VGS =-10V)
● RDS(ON) ＜ 140mΩ (VGS =-4.5V)
G1
S2
3D
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Junction and Storage Temperature Range
Ta = 25℃
Ta = 70℃
Ta = 25℃
Ta = 70℃
t≤10 sec
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
5 sec
-30
±20
-3
-2.5
-12
1.25
0.8
100
150
-55 to 150
Unit
V
A
W
℃/W
℃
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