SI2307DS-3 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2307DS (KI2307DS)
MOSFET
■ Features
● VDS (V) =-30V
● ID =-3.0A (VGS =-10V)
● RDS(ON) ＜ 80mΩ (VGS =-10V)
● RDS(ON) ＜ 140mΩ (VGS =-4.5V)
G1
S2
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current TJ =150℃ (Note.1,2)
Pulsed Drain Current
Power Dissipation (Note.1,2)
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Junction and Storage Temperature Range
Note.1: Surface mounted on FR4 board.
Note.2: t ≤ 5 sec.
Ta = 25℃
Ta = 70℃
Ta = 25℃
Ta = 70℃
t≤ 5 sec
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
5 sec
-30
±20
-3
-2.5
-12
1.25
0.8
100
150
-55 to 150
Unit
V
A
W
℃/W
℃
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