SI2307BDS Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2307BDS (KI2307BDS)
MOSFET
■ Features
● VDS (V) =-30V
● RDS(ON) ＜ 78mΩ (VGS =-10V)
● RDS(ON) ＜ 130mΩ (VGS =-4.5V)
G1
S2
3D
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (Tj=150℃) *1
ID
Pulsed Drain Current *2
Power Dissipation *1 Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient *1
Thermal Resistance.Junction- to-Ambient *3
Junction Temperature
Storage Temperature Range
IDM
PD
RthJA
TJ
Tstg
*1 Pulse width limited by maximum junction temperature.
*2 Surface Mounted on FR4 board, t ≤ 5 s.
*3 Surface Mounted on FR4 board.
5 sec
Steady State
-30
±20
-3.2
-2.5
-2.6
-2.0
-12
1.25
0.75
0.8
0.48
100
166
150
-55 to 150
Unit
V
A
W
℃/W
℃
www.kexin.com.cn ¹