SI2306DS-HF-3 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

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N-Channel MOSFET
SI2306DS-HF (KI2306DS-HF)
MOSFIECT
Features
● RDS(ON) ＜ 57mΩ (VGS =-10V)
● RDS(ON) ＜ 94 mΩ (VGS =-4.5V)
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
D
G
S
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Drain-source voltage
Gate-source voltage
Parameter
Continuous drain current (TJ = 150 ) *1,2 TA=25
--
TA=70
Pulsed drain current
Continuous source current (diode conduction) *1,2
Maximum Power dissipation *1,2
--
TA=25
TA=70
Operating junction and storage temperature range
Maximum Junction to Ambienta
t 5 sec
Steady State
*1 Surface Mounted on FR4 Board.
*2 t 5 sec
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj,Tstg
RthJA
Rating
30
20
3.5
2.8
16
1.25
1.25
0.8
-55 to +150
100
130
Unit
V
V
A
A
A
W
/W
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