SI2303BDS Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel, 30-V (D-S) MOSFET

SMD Type
P-Channel Enhancement MOSFET
SI2303BDS (KI2303BDS)
■ Features
● VDS (V) =-30V
● RDS(ON) ＜ 200mΩ (VGS =-10V)
● RDS(ON) ＜ 380mΩ (VGS =-4.5V)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
MOSFET
Unit: mm
G1
S2
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1 Ta = 25℃
Ta = 70℃
Pulsed Drain Current *2
Power Dissipation *1
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient *1
*3
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
*1 Pulse width limited by maximum junction temperature.
*2 Surface Mounted on FR4 Board, t ≤ 5 sec.
*3 Surface Mounted on FR4 Board.
5 sec
Steady State
-30
±20
-1.4
-1.3
-1.1
-1.0
-10
0.9
0.7
0.57
0.45
120
145
140
175
150
-55 to 150
Unit
V
A
W
℃/W
℃
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