SI2302DS Datasheet, PDF (1/4 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

SMD Type
N-Channel Enhancement MOSFET
SI2302DS (KI2302DS)
■ Features
● VDS=20V
● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A
● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
G1
S2
3D
MOSFET
Unit: mm
0.1 +0.05
-0.01
1.Gate
2.Source
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
*1
Ta=25℃
Ta=70℃
Pulsed Drain Current
Power Dissipation
Ta=25℃
Ta=70℃
Thermal Resistance.Junction- to-Ambient *1
*2
Junction Temperature
Storage Temperature Range
Notes:
*1.Surface Mounted on FR4 Board, t ≤ 5 sec.
*2.Surface Mounted on FR4 Board.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
20
±8
2.8
2.2
10
1.25
0.8
100
166
150
-55 to 150
Unit
V
A
W
℃/W
℃
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