|
SI2301DS-3 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET | |||
|
SMD Type
P-Channel Enhancement MOSFET
SI2301DS (KI2301DS)
MOSFET
â Features
â VDS (V) =-20V
â RDS(ON) ï¼ 100mΩ (VGS =-4.5V)
â RDS(ON) ï¼ 150mΩ (VGS =-2.5V)
G1
S2
3D
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ =150â)*1
Ta=25â
Ta=70â
Pulsed Drain Current *2
Power Dissipation *1
Ta=25â
Ta=70â
Thermal Resistance.Junction- to-Ambient *1
*3
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
*1 Surface Mounted on FR4 Board, t ⤠5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
5 sec
Steady State
-20
±8
-2.4
-2.2
-1.9
-1.8
-10
0.9
0.7
0.57
0.45
120
145
140
175
150
-55 to 150
Unit
V
A
W
â/W
â
www.kexin.com.cn 1
|
▷ |