SBT5853PT1G_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
SBT5853PT1G
Transistors
■ Features
● Collector Current Capability IC=-2A
● Collector Emitter Voltage VCEO=-35V
( _SOT-23-6 )
0.4^+0.1
-0.1
6
5
4
Unit: mm
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
1
2
3
+0.01
-0.01
+0.2
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
(Note.1)
Collector Power Dissipation
(Note.2)
Single Pulse < 10 sec (Note.2)
Thermal Resistance From Junction To Ambient (Note.1)
(Note.2)
Thermal Resistance From Junction To Lead
Junction Temperature
Storage Temperature range
Note.1:FR−4 @ Minimum Pad
Note.2:FR−4 @ 1.0 X 1.0 inch Pad
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
RθJA
RθJL
TJ
Tstg
Rating
-55
-35
-5
-2
-5
625
1
1.75
200
120
80
150
-55 to 150
0.15 +0.02
-0.02
Unit
V
A
mW
W
℃/W
℃
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