SBE807 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Schottky Barrier Diode 30V, 1.0A Rectifier

SMD Type
Schottky Diodes
SBE807 (KBE807)
■ Features
● Low switching noise.
● Low reverse current
● High frequency rectification
5
4
SOT-153 (SOT-23-5)
0.4+0.1
-0.1
5
4
1
2
3
+0.01
-0.01
+0.2
-0.1
Diodes
Unit: mm
0.15 ^+0.02
-0.02
123
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current @ 50Hz
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VRRM
VRSM
IO
IFSM
RθJA
TJ
Tstg
Rating
30
35
1
10
111
125
-55 to 125
Unit
V
A
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
Test Conditions
VR IR= 0.2mA
IF= 0.7 A
VF
IF= 1 A
IR
VR= 16 V
Cj VR= 10 V, f= 1 MHz
trr
IF=IR=100mA,Irr=0.1xIR, RL=100Ω
Min Typ Max Unit
30
0.5 V
0.53
15 uA
27
pF
10 ns
■ Marking
Marking
SJ
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