PZTA96S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – High Voltage Transistor

SMD Type
Transistors
High Voltage Transistor
PZTA96S
Features
PNP Silicon
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Total Power Dissipation Up to TA = 25 *
Storage Temperature Range
Junction Temperature
Thermal Resistance from Junction to Ambient *
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
RèJA
Rating
-450
-450
-5
-500
1.5
-65 to +150
150
83.3
* Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.;
Unit
V
V
V
mA
Watts
Electrical Characteristics Ta = 25
Parameter
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
DC Current Gain*
Saturation Voltages
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Testconditons
IC = -1.0 mA, IB = 0
IC = -100 ìA,IE = 0
IE = -10ìA, IC = 0
VCB = -400 V, IE = 0
VBE = -4.0 V, IC = 0
IC = -10 mA, VCE =-10 V
IC = -20 mA, IB =-2.0 mA
IC = -20 mA, IB = -2.0 mA
* Pulse Test: Pulse Width 300 ìs; Duty Cycle = 2.0%.
Min Typ Max Unit
-450
V
-450
V
-5.0
V
-0.1 ìA
-0.1 ìA
50
150
-0.6 V
-1.0 V
Marking
Marking
ZTA96
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