PZTA42_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
PZTA42 (KZTA42)
SOT-223
6.50±0.2
3.00±0.1
Unit:mm
■ Features
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary to PZTA92
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
4
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Rating
Unit
300
300
V
6
200
mA
500
1
W
150
℃
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 200 V , IE= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=20 mA, IB=2mA
VBE(sat) IC=20 mA, IB=2mA
hFE(1) VCE= 10V, IC= 1mA
hFE(2) VCE= 10V, IC= 10mA
hFE(3) VCE= 10V, IC= 30mA
Cob VCB= 20V, IE= 0,f=1MHz
fT
VCE= 20V, IC= 10mA,f=100MHz
Min Typ Max Unit
300
300
V
6
100
nA
100
0.5
V
0.9
25
40
40
3 pF
50
MHz
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