PZT4401_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
PZT4401 (KZT4401)
SOT-223
6.50±0.2
3.00±0.1
Unit:mm
■ Features
● Low Voltage and Low Current
● Linear Amplifier and Switch Applications
● Complementary to PZT4403
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
60
40
6
600
1
125
150
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Emitter input capacitance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 60 V , IE= 0
IEBO VEB= 6V , IC=0
IC=150 mA, IB=15mA
VCE(sat)
IC= 500 mA, IB= 50mA
IC=150 mA, IB=15mA
VBE(sat)
IC= 500 mA, IB= 50mA
hFE(1) VCE= 1V, IC= 0.1mA
hFE(2) VCE= 1V, IC= 1mA
hFE(3) VCE= 1V, IC= 10mA
hFE(4) VCE= 1V, IC= 150mA
Cib VEB= 0.5V, IC= 0,f=1MHz
Cob VCB= 5V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 20mA,f=100MHz
■ Marking
Marking
Ì»^ZT4401
4
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Unit
V
mA
W
℃/W
℃
Min Typ Max Unit
60
40
V
6
100
nA
100
0.4
0.75
V
0.95
1.2
20
40
80
100
300
30
pF
8
250
MHz
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