PXT2907A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
PXT2907A (KXT2907A)
Transistors
■ Features
● Switching and Linear Amplification
● High Current and Low Voltage
● Complement to PXT2222A
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-60
VCEO
-60
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-600
mA
Collector Power Dissipation
PC
500
mW
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
RθJA
TJ
Tstg
250
150
-55 to 150
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO Ic= -1 mA， IE= 0
-60
Collector- emitter breakdown voltage
VCEO Ic= -10 mA， IB= 0
-60
Emitter - base breakdown voltage
VEBO IE= -1 mA， IC= 0
-5
Collector-base cut-off current
ICBO VCB= -50 V , IE= 0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
IC=-500 mA, IB=-50mA
VCE(sat)
IC=-500 mA, IB=-15mA
Base - emitter saturation voltage
IC=-500 mA, IB=-50mA
VBE(sat)
IC=-500 mA, IB=-15mA
hFE(1) VCE= -10V, IC= -0.1mA
75
hFE(2) VCE= -10V, IC= -1mA
100
DC current gain
hFE(3) VCE= -10V, IC= -10mA
100
hFE(4) VCE= -10V, IC= -150mA
100
hFE(5) VCE= -10V, IC= -500mA
50
Delay time
td
Rise time
Storage time
tr
VCC=-30V, IC=-150mA
ts
IB1=- IB2= -15mA
Fall time
tf
Transition frequency
fT
VCE= -10V, IC= -20mA,f=100MHz
200
■ Marking
Marking
*2F
1.Base
2.Collector
3.Emitter
Typ Max Unit
V
-50
nA
-50
-1.6
-0.4
V
-2.6
-1.3
300
12
30
ns
300
65
MHz
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