PXT2222A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
PXT2222A (KXT2222A)
Transistors
■ Features
● Epitaxial planar die construction
● Complementary to PXT2907A
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
75
40
V
6
600
mA
500
mW
150
℃
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
75
Collector- emitter breakdown voltage
VCEO Ic= 10 mA， IB= 0
40
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
6
Collector-base cut-off current
ICBO VCB= 60 V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
IC=500 mA, IB=50mA
VCE(sat)
IC=500 mA, IB=15mA
Base - emitter saturation voltage
IC=500 mA, IB=50mA
VBE(sat)
IC=500 mA, IB=15mA
hFE(1) VCE= 10V, IC= 0.1mA
50
hFE(2) VCE= 10V, IC= 10mA
75
hFE(3) VCE= 10V, IC= 150mA
100
hFE(4) VCE= 1V, IC= 150mA
50
Delay time
Rise time
Storage time
Fall time
Collector output capacitance
Transition frequency
hFE(5) VCE= 10V, IC= 500mA
40
td
VCC=30V, IC=150mA
tr
VBE(off)=0.5V,IB1=15mA
ts
VCC=30V, IC=150mA
tf
IB1=- IB2= 15mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 20mA,f=100MHz
300
■ Marking
Marking
*1P
1.Base
2.Collector
3.Emitter
Typ Max Unit
V
50
nA
50
1
0.3
V
2
0.6 1.2
300
10
25
ns
225
60
8 pF
MHz
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