PBSS5540Z_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
PBSS5540Z (KBSS5540Z)
Transistors
■ Features
● Low collector-emitter saturation voltage
● High current capability
● Improved device reliability due to reduced heat generation.
2, 4
1
3
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-40
Collector - Emitter Voltage
VCEO
-40
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
IC
-5
Peak Collector Current
ICM
-10
A
Peak Base Current
IBM
-2
Collector Power Dissipation (Note.1)
(Note.2)
1.35
PC
W
2
thermal resistance from junction to ambient (Note.3)
Rth j-a
92
K/W
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-65 to 150
Note.1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm ² .
Note.2:Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm ² .
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
HandBook"
Note.3:Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm² .
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