PBSS5160T_15 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
PBSS5160T (KBSS5160T)
■ Features
● Low collector-emitter saturation voltage VCEsat
● High collector current capability: IC and ICM
● High efficiency, reduces heat generation
● Reduces printed-circuit board area required
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
C
B
E
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Note.1
Note.2
Collector Current - Pulse
Base Current
Base Current - Pulse
Collector Power Dissipation
Note.1
Note.2
Note.3
Note.1
Tthermal Resistance From Junction to Ambient Note.2
Note.3
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
RθJA
TJ
Tstg
Rating
-80
-60
-5
-0.9
-1
-2
-0.3
-1
270
400
1.25
465
312
100
150
-65 to 150
Unit
V
A
mW
W
℃/W
℃
Note.1 : Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Note.2 : Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm² collector mounting pad.
Note.3 : Operated under pulsed conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms.
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