PBSS4350T_15 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
PBSS4350T (KBSS4350T)
Transistors
■ Features
● High collector current capability
● High collector current gain
● Improved efficiency due to reduced heat generation.
● Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
3
1
2
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Repetitive Peak Collector Current (Note.1)
Collector Current - Pulse
Base Current
(Note.2)
Collector Power Dissipation
(Note.3)
(Note.4)
(Note.1 and 2)
(Note.2)
(Note.3)
Thermal Resistance Junction to Ambient
(Note.4)
(Note.1 and 2)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICRP
ICP
IB
PC
RθJA
TJ
Tamb
Tstg
Rating
50
50
5
2
3
5
0.5
300
480
540
1.2
417
260
230
104
150
-65 to 150
-65 to 150
Unit
V
A
mW
W
℃/W
℃
Note.1: Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
Note.2: Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Note.3: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm ².
Note.4: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm ².
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