PBSS306NX_15 Datasheet, PDF (1/6 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
PBSS306NX (KBSS306NX)
Transistors
■ Features
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● Complement to PBSS306PX.
C
B
E
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
@ tp ≤ 1 ms
(Note.1)
Collector Power Dissipation
(Note.2)
(Note.3)
(Note.1)
Thermal Resistance from Junction to Ambient (Note.2)
(Note.3)
Thermal Resistance from Junction to Solder Point
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
RθJA
RθSP
TJ
Tstg
Rating
100
100
5
4.5
9
0.6
1.65
2.1
208
76
60
20
150
-65 to 150
Unit
V
A
W
℃/W
℃
Note.1: Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Note.2: Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ² .
Note.3: Device mounted on a ceramic PCB, Al2O3, standard footprint.
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